GaN integrated power stages target 30 to 500-W range

Infineon Technologies AG has expanded its GaN-based portfolio with the introduction of the new CoolGaN IPS family of integrated power stage (IPS) products. The initial portfolio of integrated power stages consists of half-bridge and single-channel products, targeting low-to medium power applications, including chargers and adapters and switched-mode power supplies (SMPS).

The 600-V CoolGaN half-bridge IPS IGI60F1414A1L targets compact and lightweight designs in the low-to-medium power range. Housed in a thermally enhanced 8 × 8 QFN-28 package, the IPS combines two 140 mΩ/600 V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side EiceDRIVER gate drivers.

The isolated gate driver with two digital PWM inputs makes it easy to control the IGI60F1414A1L, said Infineon. The gate driver’s input-to-output isolation is based on the company’s proven on-chip coreless transformer (CT) technology. This delivers high speed and robustness even for extremely fast switching transients with voltage slopes exceeding 150 V/ns, according to the company.

In addition, the device’s switching behavior can be adapted to meet the needs of different applications with a few passive gate path components, said Infineon. This allows slew rate optimization, for example, to reduce electromagnetic interference (EMI) efforts, steady-state gate current setting, and negative gate drive for robust operation in hard-switched applications.

The IGI60F1414A1L also is said to offer the lowest possible system dead-times thanks to system-in-package integration and the highly accurate and stable propagation delay of the gate drivers This helps to maximize system efficiency, with power density up to 35 W/in³ for charger and adapter solutions.

Available now, the 600 V CoolGaN IPS half-bridge will be showcased at Infineon’s Virtual Power Conference, which complements “PCIM Europe digital days.” Please click here to register.