GaN power device targets A4WP wireless power transfer

The EPC2107 (100 V) and EPC2108 (60 V) are eGaN half bridge power ICs that are the first to integrate a bootstrap FET, which eliminates gate driver induced reverse recovery loses as well as the need for a high-side clamp. They are designed specifically for resonant wireless power transfer applications. The GaN power devices come in chip-scale packages, reducing the size of the overall system.

By integrating two eGaN power FETs into an integrated power circuit, interconnect inductances and the interstitial space needed on the PCB are eliminated. It increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the wireless power system designer’s end product. The power devices include a monolithic half bridge and integrated bootstrap functions for Alliance for Wireless Power (A4WP) compliant Class 2 and Class 3 solutions. In addition, development boards and wireless power solutions for transmit and receive devices are available.