GaN power-semi process qualifies for 65-V operation

GaN power-semi process qualifies for 65-V operation

RF Micro Devices has announced that it has qualified its GaN1 power-semiconductor process technology for 65-V operation. This high-reliability process supports not only the company’s GaN-based power semiconductor product designs, but also is available to foundry customers through RFMD’s foundry services business unit. In the past, the GaN1 process had been qualified for 48-V operation. Increasing the operating voltage from 48 to 65 V enables tiny, 0.5-kW power devices with high operating efficiency for L- and S-band military and civilian radar applications.

The new 65-V process had demonstrated a MTTF of 43 million hours with a channel temperature of 200C at power densities of 10 W. Additional information on RFMD’s foundry services business unit can be obtained by contacting

Christina Nickolas