Navitas Semiconductor has expanded its GaNSafe family of GaN power semiconductors with a thermally-enhanced TO-leaded top-side cooling (TOLT) package. The GaNSafe family addresses demanding high-power applications such as AI data centers, solar, energy storage and industrial markets.
The importance of the TOLT packaging can be seen in enhanced thermal dissipation through the top side that allows heat to be dissipated directly to the heat sink rather than through the PCBA. The result is a reduction in operating temperature and increased current capability, resulting in better performance, efficiency, power density and reliability in demanding applications, according to Navitas.
(Source: Navitas Semiconductor)
GaNSafe features include high-speed short-circuit protection—2-kV ESD protection on all pins—with autonomous ‘detect and protect’ with ultra-fast 350 ns/50 ns latency, elimination of negative gate drive and programmable slew rate control, all of which are controlled with 4-pins. The package can be treated like a discrete GaN FET, eliminating the need for a VCC pin.
The GaNSafe devices also offer protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for high-speed 2-MHz switching capability to maximize application power density. They also feature an integrated Miller clamp.
The 650-V continuous and 800-V transient voltage capability meet the need for extraordinary application conditions, Navitas said, while programmable turn-on and turn-off speeds simplify EMI regulatory requirements.
Targeting 1-kW to 22-kW applications, the 650-V GaNSafe power ICs in TOLT packaging is available with a RDS(ON)MAX range from 25 to 98 mΩ. Navitas will offer reference design platforms based on GaNSafe TOLT for applications including data-center power supplies and EV on-board chargers. The system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results.
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