GaN power transistors break Si cost-speed barriers

The 60 V EPC2035 and 100 V EPC2036 eGaN power transistors compete in price, while outperforming silicon. The GaN FETs provide comparable maximum-rated R_DSon , V_DS , Q_OSS , Q_GD , and Q_G values to MOSFETs.

The capacitances of the new GaN devices are significantly less than counterpart MOSFETs. Device area is also less for GaN products than the area of an equivalent MOSFET component. Development boards EPC9049 and EPC9050 are available to support in circuit performance evaluation. The boards measure 2 x 1.5-in. and are in a half-bridge topology. They feature the eGaN FETs, onboard gate drives, supply and bypass capacitors. The boards contain all the critical components and are laid out for optimal switching performance.