GaN transistor demonstrates 97.5% efficiency PFC supply

A power supply design using the TPH3006PS JEDEC-qualified GaN on silicon, 600-V high electron mobility transistors (HEMTs), demonstrates 97.5% efficiency. The supply implements a 99% efficiency totem-pole PFC front end, combined with a 98.6% efficiency LLC converter.

Based on the patented EZ-GaN technology, the HEMT device reduces energy loss by 50% compared to conventional silicon-based power conversion designs. The TO-220-packaged GaN transistor features 150-mΩ on-state resistance, 54 nC reverse-recovery charge, and high-frequency switching capability. For approved customers, the TPH3006PS and TPH3006PD HEMT devices are available for sale at a price of $5.89 ea/1,000. The TPS3410PK diode is $2.06 ea/1,000 and the TPS3411PK diode is $1.38 ea/1,000.