Half-bridge MOSFET saves space

Alpha and Omega Semiconductor Limited (AOS) has launched its AONG36322 XSPairFET in a smaller footprint for space-constrained DC/DC applications. The AONG36322 features two 30-V MOSFETs in a half-bridge configuration where the high-side and the low-side MOSFETs are housed in an asymmetric DFN 3.5 × 5-mm XSPairFET package. This design allows the AONG36322 to replace an existing DFN 5 × 6-mm asymmetric half-bridge MOSFET with about a 60 percent space-saving solution.

(Source: Alpha and Omega Semiconductor Ltd.)

This reduces the PCB footprint to further streamline the DC/DC architecture, resulting in a more efficient design, AOS said. Applications include a new generation of smaller DC/DC buck converters in more compact applications such as point-of-load (POL) computing, USB hubs and power banks.

AOS said the XSPairFET design helps designers meet board space limitations, while also providing improved power density and efficiency to meet POL buck application performance requirements.

The integrated high-side and low-side MOSFETs feature 4.5-mOhms and 1.3-mOhms maximum on-resistance, respectively, where the low-side MOSFET source is connected directly to the exposed pad on the PCB to enhance thermal dissipation. Another benefit of the package design is lower parasitic inductance, significantly reducing switch node ringing. The junction and storage temperature range is -55°C to 150°C.

Key specs

(Source: Alpha and Omega Semiconductor Ltd.)

The AONG36322 half-bridge MOSFET is available in production quantities with a lead time of 16 weeks. Pricing per unit is $0.915 in quantities of 1,000.