High-frequency gate driver delivers more efficient power systems

Diodes Inc. has released the DGD0579U high-side and low-side gate driver for high-power applications. The high-frequency gate driver, with an integrated bootstrap diode, is capable of driving two N-channel MOSFETs in the half-bridge configurations that are commonly used for motor control and DC-DC power delivery functions, said the company. The gate driver targets high-power applications such as cordless power tools, e-bikes, and autonomous robot appliances that demand higher efficiency, while using less board space.

(Source: Diodes Inc.)

The DGD0579U’s 100-V floating high-side driver provides greater design flexibility. The gate driver’s short propagation delays (typically 60 ns) and delay matching (within 10 ns) enables higher switching speeds and reduced dead-time, resulting in smaller, more efficient power system implementations, said Diodes.

For further space savings, the gate driver integrates advanced MOSFET protection, which is said to improve system reliability, optimize board space usage, and reduce component count compared to traditional discrete solutions. Protection features include cross conduction prevention, so that the high-side and low-side MOSFETs are not on at the same time, and under-voltage lockout (UVLO) to address potential supply losses.

The DGD0579U features an enable pin for power management and ultra-low (<1 μA) standby current that is said to help deliver longer battery run times. It is also compatible with control signals from microcontrollers and PWM controller ICs, supporting TTL and CMOS logic level inputs (down to 3.3 V).

DGD0579U gate driver functional block diagram (Source: Diodes Inc.)

The DGD0579U gate driver is supplied in the W-DFN3030-10 package, with a 3 × 3-mm footprint and a 0.75-mm profile height. The device is priced at $0.47 in quantities of 1,000.