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High-performance common-drain MOSFETs help battery design

The AON6810, AON6812, and AOC4810 are a family of dual MOSFETs in the common-drain configuration. They are offered in both DFN 5 x 6-mm and Micro-DFN 3.2 x 2-mm packages. The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back to back for safe charging and discharging as well as voltage protection. The products provide RSS (source-to-source resistance) of <10 mΩ at 10-V gate drive. They target the latest-generation Ultrabooks and tablets, where low conduction loss is a must for optimizing battery life.

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The MOSFETs feature 4.0 to 4.4 mΩ at 10-V RDS(on) and 4-kV ESD protection. The AON6810 and AON6812 use a bottom-exposed DFN 5 x 6-mm package for enhanced thermal capability. The AON6812 features a 8-mΩ max total RSS  at 10-V gate drive. Rated with a 30-V breakdown voltage, it can charge and discharge a laptop battery pack with the least amount of power loss and heat dissipation. The AON6810 provides an extra level of protection with an internal temperature-sense diode that provides first-hand thermal information to the battery-control IC. The AOC4810 suits ultra-thin battery packs by using a Micro-DFN package that features a 0.4-mm profile.

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