The 60-V TPW1R306PL features an on resistance of just 0.95mΩ (at VGS = 10 V) and is offered in a very small form factor of 5 x 6mm. These U-MOS IX-H MOSFETs now offer an N-channel device in a ‘DSOP Advance’ SMD package that offers double sided cooling. Maximum drain current and power dissipation are 260 A and 170 W, respectively. The enhanced thermal dissipation provided by the double-sided cooling will help to reduce device count and save space in high-component-density applications. The thermal resistance rating is 0.88 k/W to the top side of the package.
Typical QOSS is just 77.5nC, allowing designers to improve system performance and efficiency by raising switching speeds and reducing switching losses. Target applications for this latest MOSFET include dc/dc converters, secondary-side circuits of ac/dc power supplies and motor drives in cordless home appliances and power tools. Toshiba Electronics Europe : www.toshiba.semicon-storage.com
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