High-speed MOSFETs feature double sided cooling

The 60-V TPW1R306PL features an on resistance of just 0.95mΩ (at V_GS = 10 V) and is offered in a very small form factor of 5 x 6mm. These U-MOS IX-H MOSFETs now offer an N-channel device in a ‘DSOP Advance’ SMD package that offers double sided cooling. Maximum drain current and power dissipation are 260 A and 170 W, respectively. The enhanced thermal dissipation provided by the double-sided cooling will help to reduce device count and save space in high-component-density applications. The thermal resistance rating is  0.88 k/W to the top side of the package.

Typical Q_OSS is just 77.5nC, allowing designers to improve system performance and efficiency by raising switching speeds and reducing switching losses. Target applications for this latest MOSFET include dc/dc converters, secondary-side circuits of ac/dc power supplies and motor drives in cordless home appliances and power tools. Toshiba Electronics Europe : www.toshiba.semicon-storage.com