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High-speed NAND gate in small footprint package

IXYS- High speed NAND gate in small footprint package
74AHC1G00 and 74AHCT1G00 are high-speed, 5-lead Si-gate CMOS devices that provide a 2-input NAND function. These CMOS devices can be driven with a supply voltage that ranges from 2 V to 5.5 V. Both AHC and AHCT devices offer symmetrical output impedance and balanced propagation delays.

Features:
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
Specified from -40 °C to +125 °C
ESD protection:
– HBM JESD22-A114E: exceeds 2000 V
– MM JESD22-A115-A: exceeds 200 V
– CDM JESD22-C101C: exceeds 1000 V

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