High-temp SiC MOSFET suits power converter applications

The CHT-NEPTUNE is a high-temperature, high-voltage, SiC MOSFET specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically-sealed TO-257 metal package. The case is isolated from the switch terminals and features junction-to-case thermal resistance of 1.1°C/W.

The SiC MOSFET is guaranteed for operation over the full range from -55°C to +225°C. It has a breakdown voltage in excess of 1,200 V and is capable of switching currents up to 10 A at the maximum temperature (Tj = 225°C). The device features a body diode that can be used as free-wheeling diode. The switch can be controlled with a typical gate voltage (VGS) of -2 V / +20 V. The transistor’s RDS(ON) exhibits 90 mΩ at 25°C and 150 mΩ at 225°C with VGS=20 V. The device features low and temperature-independent switching energy