High-voltage power transistor targets radar apps

High-voltage power transistor targets radar apps

Vertical architecture provides advantages in output, gain, and ruggedness

The HVV0405-175 high-voltage vertical field-effect transistor (HVVFET) suits radar applications in the UHF band. Operating across the 420 to 470-MHz band, it offers system designers a qualified 175-W RF power transistor.

The transistor outperforms competitive bipolar and LDMOS devices by supplying up to 25-dB gain with a 300-µs pulse width, 10% pulse duty cycle at 50 VDD , and 50-mA IDQ . The UHF HVVFET boosts system reliability by withstanding an output load mismatch corresponding to a 20:1 VSWR across all phase angles at rated output power and operating voltage across the entire frequency band.

The performance advantages over bipolar and LDMOS alternatives allow designers to eliminate amplification stages in power amplifiers, reduce parts count and shrink PCB requirements. The HVVFET technology also offers higher rated ruggedness, improves reliability, and by eliminating bulky isolators, reduces system size and weight. ($280.42 ea/24 — available now through Richardson Electronics, www.rell.com.)

HVVi Semiconductors Inc. , Phoenix , AZ
Information 480-776-3848
http://www.hvvi.com