The RJK60S5DPK high-voltage n-channel power MOSFET targets power supply units for PC servers, flat-panel TVs, communication base stations, and solar-power-generation systems. The device suits the primary power-switching circuit of a power supply unit that converts ac to dc. It uses a high-precision super-junction structure that employs a deep-groove formation process to achieve a figure of merit that is about 90% better than its existing products.
The MOSFET features 150-mΩ on-resistance at 10 A, and drive capacitance gate charge of 6 nC. The device packaging is equivalent to the TO-3P standard package, and the pin assignments conform to the industry standard. ($5 ea/sample qty — samples available now.)
By Paul O’Shea
Renesas Electronics America , Santa Clara , CA
Sales 800-366-9782
http://am.renesas.com
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