Hybrid IGBTs target high-power automotive and industrial applications

(Source; Rohm Semiconductor)

Rohm Semiconductor has introduced the RGWxx65C series of hybrid IGBTs with an integrated 650-V silicon carbide (SiC) Schottky barrier diode that is qualified under the AEC-Q101 automotive reliability standard. These hybrid IGBTs reduce turn-on switching loss. The devices target automotive and industrial applications that handle high power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEVs).

The RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, and RGW00TS65CHR) uses Rohm’s low-loss SiC Schottky barrier diodes in the IGBT feedback block as a freewheeling diode that has almost no recovery energy, which translates into minimal diode switching loss. In addition, since the recovery current does not have to be handled by the IGBT in turn-on mode, IGBT turn-on loss is significantly reduced, said the company.

These features result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with superjunction MOSFETs (SJ MOSFETs) when used in vehicle chargers, delivering good cost performance and lower power consumption, according to Rohm.

Comparison of losses versus traditional IGBT and superjunction MOSFETs (Source: Rohm Semiconductor)

The hybrid IGBTs, housed in TO-247N and TO-263L (LPDL) packages, are available for sampling. Mass production is expected in December 2021. They are available through authorized online distributors include Digi-Key, Farnell, and Mouser. Design support information is available here.