Hybrid memory combines EEPROM and Flash benefits

STMicroelectronics has released its Page EEPROM, a combination of EEPROM power efficiency and durability with Flash memory capacity and speed. The two-in-one hybrid memory targets applications with “extreme” size and power constraints, including wearables, healthcare devices, asset trackers, e-bikes and a variety of consumer and industrial products.

(Source: STMicroelectronics)

Supporting these embedded applications with increasingly advanced features and data-hungry edge-AI algorithms, the new memories include fast erase/write performance, high cycling endurance and robust retention. Fast wake up and byte flexibility, block management and fast quad output are provided, while keeping current surge and the energy budget at low levels.

According to one of the first customers of ST’s Page EEPROM, the non-volatile memory enabled them to meet ambitious targets for its latest generation of GPS trackers, IoT devices and other designers. “The M95P is up to 50 times faster yet consumes as little as one-tenth the power and delivers five times the reliability — at 500k writes compared to 100k writes — typical of other parts we used before. It’s a game changer,” said Patrick Kusbel, owner of BitFlip Engineering, in a statement.

The Page EEPROM family is available in densities of 8 Mbit, 16 Mbit and 32 Mbit, increasing storage over standard EEPROM devices. The devices also feature buffer loading, which can program several pages simultaneously to cut the time for loading software in production. A data-read speed of 320 Mbit/s is approximately 16× faster than standard EEPROM, while write-cycle endurance of 500,000 cycles is several times higher than conventional serial Flash.

Other features include embedded smart page-management that allows byte-level write operations for processes like data logging, while also supporting page/sector/block erase and page-program up to 512 bytes for handling firmware over-the-air (OTA) updates.

By incorporating novel peak-current control, Page EEPROM minimizes power supply noise and prolongs the runtime of battery-operated equipment. Write current is below that of many typical  EEPROMs, ST said, and there is also a deep power-down mode with fast wakeup that reduces the current to below 1 µA.

The X-NUCLEO-PGEEZ1 expansion board and X-CUBE-EEPRMA1 software package are available to help customers learn how to use and design in the Page EEPROM. The software includes a demonstration application showing how to test the memory’s hybrid architecture and rapidly build a proof of concept.

The M95P08, M95P16 and M95P32 Page EEPROMs are in production and available from $0.50 for the 8-Mbit M95P08. The X-NUCLEO-PGEEZ1, priced at $40, is available for order from the eSTore. Products are available in small 8-pin packages, including SO8N, DFN2X3, DFN4X4 and WLCSP8, as well as bare die.

Longevity is assured with 100-year data retention, ST said. The devices are included in ST’s 10-years product longevity program that guarantees long-term product availability.