The TIG058E8 IGBT suits xenon flash applications in portable cameras in cell phones and compact digital cameras. It reduces the mounting area by 60% over current products while keeping the equivalent light control performance of the xenon flash in an ECH8 package.
The device dimensions are 2.8 x 2.9 mm with a mounting height of 0.9 mm. The IGBT has a 150-A maximum collector pulse current, a 400-V max collector-to-emitter voltage, 400-V/µs collector-to-emitter dv/dt, and a 0.4 to 0.9-V gate-to-emitter threshold voltage. ($2.50 ea/sample — mass production, May 2009.)
Sanyo Semiconductor , Saddle Brook , NJ
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