Infineon adds 2-kV SiC MOSFETs

Infineon Technologies AG has its expanded CoolSiC portfolio with high-voltage solutions that address 1500-VDC applications such as next-generation photovoltaic, EV charging and energy storage systems. These include the 2-kV SiC MOSFETs and 2-kV SiC diode, addressing the challenges in these 1500-VDC-based designs, which include fast switching at high DC voltage.

The new SiC MOSFETs offer low-switching losses and a high-blocking voltage. The 2-kV CoolSiC technology also offers a low drain-source on-resistance (R_DS(on)) value and the rugged body diode is suitable for hard switching.

Infineon said the technology enables sufficient overvoltage margin and offers ten times lower FIT rate caused by cosmic ray, compared to 1700-V SiC MOSFETs. In addition, the extended gate-voltage operating range makes the devices easy to use.

The new SiC MOSFET chip is based on Infineon’s advanced SiC MOSFET technology called M1H. The technology was recently introduced with the launch of the of M1H technology 1,200-V SiC MOSFETs. The new technology enables a much larger gate voltage window that improves the on-resistance for a given die size, said Infineon, and the larger gate voltage window provides protection against driver- and layout-related voltage peaks at the gate.

Infineon also offers a range of EiceDRIVER gate drivers with functional isolation of up to 2.3 kV to support the 2-kV SiC MOSFETs. Samples of the 2-kV CoolSiC MOSFETs are available now in EasyPACK 3B and 62-mm modules. This will be followed later in a new high-voltage discrete TO247-PLUS package. Infineon rolled out the new Easy 3B module with the launch of the  MH1 1,200-V CoolSiC MOSFET, which offers a maximum temporary junction temperature of 175˚C for greater overload capability.

Production of the Easy 3B (DF4-19MR20W3M1HF_B11), a power module with 4 boost circuits, is planned for Q3 2022, with the 62-mm module in a half-bridge configuration (3, 4, 6 mΩ) will follow in Q4 2022. The discrete devices using the .XT interconnection technology will be available by the end of 2022.