Infineon Technologies AG has claimed the industry’s first radiation-hardened (rad hard) 1- and 2- Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. Offering extremely high reliability and endurance, these F-RAMs offer up to 120 years of data retention at 85°C, along with random access and full memory write at bus speeds.
These F-RAM devices are intrinsically rad hard, Infineon said, and the technology is suited for the mission requirements of space-based applications that historically have used less rugged EEPROM nonvolatile storage devices. Compared to alternative solutions, F-RAMs are reported to offer faster memory random access, better data security with instant non-volatile write technology and low power, with low programming voltage down to 2 V and maximum operating current of 20 mA.
In addition, F-RAMs are inherently immune to soft errors and magnetic field or radiation effects, Infineon said, with no requirement for software to manage page boundaries and near infinite endurance (10 13 write cycles), so no wear leveling is needed.
Key radiation performance specs include
- TID: >150 Krad (Si)
- SEL: >96 MeV·cm 2/mg @115°C
- SEU: Immune
- SEFI: <1.34 * 10-4 err / dev.day (active/standby) / Immune (sleep mode)
Infineon introduced the first SPI F-RAM devices in 2022. Like the SPI version, the chemical composition of the new parallel interface F-RAM devices delivers exceptional non-volatile memory features, including instantaneous switching of atomic state, instead of a trapped charge to program bits in EEPROM technologies, the company said.
Target space applications include data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption and boot code storage. They also are suited for avionic and other applications that require military standard temperature grades (-55°C to 125°C).
Available now, the parallel F-RAMs are housed in a 44-lead ceramic TSOP package. They are QML-V qualified.
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