Infineon Technologies AG has expanded its CoolSiC family with a new line of 650-V SiC MOSFETs in a compact D2PAK 7-pin package with .XT interconnection technology. Comprised of 10 new products, these SiC MOSFETs can be used in a range of power applications, including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy systems, energy storage, and battery formation.
The .XT interconnection technology is said to significantly improve the package’s thermal capabilities. Infineon said up to 30 percent extra loss can be dissipated compared to a standard interconnection.
Click for a larger image. (Source: Infineon Technologies)
The new SiC products claim improved switching behavior at higher currents and 80 percent lower reverse recovery charge (Q rr) and drain-source charge (Q oss) than the best silicon reference. The reduced switching losses allow high-frequency operations in smaller system sizes, enabling higher efficiency and power density, said Infineon, with the trench technology contributing to the higher gate oxide reliability. The devices also provide improved avalanche and short-circuit robustness for high system reliability.
The SiC MOSFETs are suitable for topologies with repetitive hard commutation as well as for high temperature and harsh operations. They also are said to deliver excellent thermal behavior thanks to a very low on-resistance, or RDS(on).
The new family also works with standard MOSFET gate driver ICs thanks to a wide gate-to-source (V GS) voltage range from -5 V up to 23 V, 0 V turn-off V GS, and a gate-source threshold voltage (V GS(th)) greater than 4 V. The devices support bi-directional topologies and full dv/dt controllability, which provides several benefits, including reduced system cost and complexity, as well as ease of integration.
The CoolSiC 650-V MOSFETs in the D2PAK 7-pin (TO-263-7) package are available now. Infineon exhibited at APEC 2022 in Booth #1114.
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