Infineon Technologies AG has expanded its EXCELON Ferroelectric RAM (F-RAM) family with two new memory devices in 1-Mbit and 4-Mbit densities for data logging in automotive event data recorder (EDR) applications that require data stored for decades. The 1-Mbit devices are touted as the industry’s first automotive-qualified serial F-RAMs available.
EXCELON F-RAM (Source: Infineon Technologies)
The EXCELON F-RAM features a zero delay write capability that allows the system data to be captured and recorded up to the last instant before an accident or other user-defined trigger event, said Infineon. It is also designed to retain data for more than 100 years after power loss.
The AEC-Q100 Grade 1-qualified devices operate over an extended temperature range of -40°C to 125°C, joining Infineon’s family of automotive F-RAM products ranging from 4-Kbit up to 16-Mbit densities. They provide fast read/write performance at speeds up to 50 MHz in SPI mode and up to 108 MHz in quad SPI (QSPI) mode, and 10 trillion read/write cycles to support data logging at 10-microsecond intervals for over 20 years.
Other features include the ultra-low power consumption characteristic of the F-RAM, a serial (SPI/QSPI) interface and a 1.8-V to 3.6-V voltage range. The devices are available in a standard 8-pin SOIC package.
The 1-Mbit (CY15B201QN-50SXE) and 4-Mbit (CY15B204QN-40SXE) EXCELON automotive F-RAM devices are now in volume production. A quad SPI interface version of both devices is expected by the end of 2023.
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