Integrated GaN devices simplify power conversion

STMicroelectronics has launched its integrated MasterGaN4 devices, targeting high-efficiency power conversion applications up to 200 watts (W). The MasterGaN4 power packages integrate two symmetrical 650-V gallium nitride (GaN) power transistors with 225 mΩ RDS(on), with optimized gate drivers and circuit protection to simplify the design of high-efficiency power-conversion applications up to 200 W.

MasterGaN4 simplifies design using wide-bandgap GaN power semiconductors by removing the complex gate-control and circuit-layout challenges, said ST. “With inputs tolerant of voltages from 3.3 V to 15 V, MasterGaN4 can be controlled by connecting the packages directly to Hall-effect sensors or a CMOS device such as a microcontroller, DSP, or FPGA.”

One of the biggest benefits of GaN technology is its higher operating frequencies. By leveraging the higher operating frequencies enabled by the switching performance of GaN transistors, and their increased efficiency that reduces thermal dissipation, said ST, designers can choose small magnetic components and heat sinks to build smaller and lightweight power supplies, chargers, and adapters.

Other benefits include a wide supply-voltage range, from 4.75 V to 9.5 V, to ease connection to an existing power rail and built-in protection, including gate-driver interlocks, low-side and high-side under-voltage lockout (UVLO), and over-temperature protection. The MasterGaN4 devices also feature a dedicated shutdown pin and operate over the industrial temperature range of -40°C to 125°C.

(Image: STMicroelectronics datasheet)

MasterGaN4 is well suited for symmetrical half-bridge topologies and soft-switching topologies such as active clamp flyback and active clamp forward. ST offers a prototype board (EVALMASTERGAN4) that provides a complete set of features to drive the MasterGaN4 with a single or complementary driving signal. It also comes with an adjustable deadtime generator. The board allows users to apply a separate input signal or PWM signal, insert an external bootstrap diode, separate the logic and gate-driver supply rails, and to use a low-side shunt resistor for peak-current-mode topologies. The EVALMASTERGAN4 board is priced at $87.

MasterGaN4 is in volume production, in a 9 × 9 × 1-mm GQFN package that has over 2 mm creepage distance for safe use in high-voltage applications. Pricing starts at $5.99 in quantities of 1,000.