The SiC530CD, SiC531CD, SiC532CD, SiC631CD, and SiC632CD devices combine power MOSFETs, a MOSFET gate driver IC, and a bootstrap Schottky diode in thermally enhanced 4.5 x 3.5-mm MLP4535-22L and 5 x 5-mm MLP55-31L packages. They offer a 45% smaller footprint compared to discrete solutions. The devices target high-current, high-efficiency, and high-power-density performance in next-generation notebooks, ultrabooks, and desktops. Their high power density is optimized for computing platforms using the Intel Skylake platform. The devices are also suitable for industrial PC and high-current multiphase modules used in networking and industrial applications.
The integrated power stages offer continuous current up to 30 A in the 4.5 x 3.5-mm package and 40 A in the 5 x 5 mm package. They also lower package parasitics to enable switching frequencies up to 2 MHz. The driver IC is compatible with a wide range of PWM controllers and supports tri-state PWM logic of 5 V. They are optimized for synchronous buck converters, dc/dc voltage regulation modules, and multiphase VRDs for CPUs, GPUs, and memory.
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