International Rectifier Introduces Trio of 25V DirectFET MOSFETs

International Rectifier Introduces Trio of 25V DirectFET MOSFETs

International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced three new 25V DirectFET® MOSFETs. The IRF6622 Control MOSFET, and IRF6628 and IRF6629 synchronous MOSFETs are designed for embedded CPU power, VRM modules for servers and telecommunication systems and embedded DC-DC converters, where high efficiency and improved thermal conductivity are needed to increase power density.

“The 25V DirectFETs hit the sweet spot for 12V applications by offering voltage headroom compared to competitive 20V offerings and reduced power loss versus 30V devices with the same active silicon area.” said Faisal Ahmad, marketing manager for DC-DC Computing Products.

The IRF6622 Control MOSFET features very low gate charge (QG = 12nC) for minimal switching losses. The IRF6628 and IRF6629 synchronous MOSFETs are optimized for low conduction loss with very low RDS(on), 1.9mOhms and 1.6mOhms, respectively.

The 25V DirectFETs are targeted for 20A to 30A per phase designs. In a 12VIN, 1.3VOUT, 300kHz, five-phase design, one IRF6622 and IRF6628 pair per phase achieve efficiency of 88% at 130A together with International Rectifiers XPhase® chipset. Under the same conditions, the IRF6622 and IRF6629 pair reaches higher efficiency, giving 88.5% at 130A.