Low-RDS(on) MOSFETs target portables

The ECOMOS series of p-channel and n-channel MOSFETs feature RDS(on) values 90% lower than comparable devices when operated at 1.5- or 1.2-V gate drive (VGS ). They target the gate drive voltages of emerging generations of portable electronics.

The MOSFETs feature a submicron cell pitch structure, using microfabrication technology to increase current capacity per unit area to approximately 2.5x conventional products. The devices are offered in three package sizes, depending on maximum power dissipation, in configurations that include single p- or n-channel devices (with or without Schottky barrier diode) and complex, multi-die dual p-channel or n-channel devices. ($0.16 to $0.46 ea/small qty — available now.)

ROHM Semiconductor , San Diego , CA
Information 888-877-ROHM
http://www.rohmsemiconductor.com