Alliance Memory has expanded its high-speed CMOS mobile low-power SDRAM offerings with new 16-Gb and 32-Gb LPDDR4X devices. Designed to increase battery life in portable electronics for consumer, commercial and industrial markets, the 16-Gb AS4C512M32MD4V-046BIN and 32-Gb AS4C1G32MD4V-046BIN offer low-voltage operation of 0.6 V.
(Source: Alliance Memory)
These LPDDR4X SDRAMs address the need for higher power efficiency for increased battery life in portable devices such as smartphones, smart speakers, security surveillance systems and other IoT devices using AI and 5G technologies. They combine low-voltage operation with fast clock speeds of 2.133 GHz and high data rates of 4.2 Gbits/s. Offering a 32-bit bus width, the devices operate over an industrial temperature range of -40°C to 95°C.
The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN SDRAMs feature two channels per device with individual channels consisting of eight banks of 16 bits. They have fully synchronous operation, programmable read and write burst lengths of 16, 32 and on the fly, and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate.
The LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a variety of similar solutions in high-bandwidth, high-performance memory system applications, eliminating costly redesigns and part requalification, the company said.
Key specifications:
(Source: Alliance Memory)
Samples and production quantities of the new LPDDR4X SDRAMs, housed in a 200-ball TFBGA package, are currently available with lead times of 12 weeks.
Advertisement
