MDmesh MOSFETs deliver higher power density

STMicroelectronics has unveiled its new STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon power MOSFETs, targeting SMPS in applications such as data-center servers, 5G infrastructure, and flat-panel televisions. The first devices launched are the 650-V STP65N045M9 and 600-V STP60N043DM9. Both offer very low on-resistance (R_DS(on)) per unit area, resulting in higher power density and smaller system sizes.

ST said each device offers the best maximum R_DS(on) in its category, at 45 mΩ for the STP65N045M9 and 43 mΩ for the STP60N043DM9. With very low gate charge (Q_g), typically 80 nC at 400-V drain voltage, these devices have the best R_DS(on) max Q_g figure of merit currently available, said the company.

The gate threshold voltage (V_GS(th)), typically 3.7 V for the STP65N045M9 and 4.0 V for the STP60N043DM9, minimizes both turn-on and turn-off switching losses compared with the previous MDmesh M5 and M6/DM6 devices. They also feature a very low reverse recovery charge (Q_rr) and reverse recovery time (t_rr), which further contribute to improved efficiency and switching performance.

In addition, ST’s latest high-voltage MDmesh technologies features an additional platinum diffusion process that is said to ensure a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than earlier processes. All MDmesh DM9 devices can withstand dv/dt up to 120 V/ns at 400 V.

The MDmesh M9 and DM9 devices, the STP65N045M9 and STP60N043DM9, both in a TO-220 power package, are in production and will be available at distributors by the end of Q2 2022. Additional standard surface-mount and through-hole package options will be added later in 2022.