Microchip Technology Inc. recently expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave ICs (MMICs) and discrete transistors that cover frequencies up to 20 gigahertz (GHz). Earlier this year, Microchip unveiled its first GaN MMIC power amplifier, the ICP2840 (originally released as the GMICP2731-10). The MMIC devices target 5G, satellite communications, and defense applications.
These new devices complement Microchip’s existing portfolio of GaAs MMIC RF power amplifiers (PAs), switches, low-noise amplifiers, and Wi-Fi front-end modules, as well as a GaN-on-SiC high electron mobility transistor (HEMT) driver, and final amplifier transistors for radar systems.
Microchip’s product strategy for its GaN RF products is to support all applications at all frequencies from microwave to millimeter wavelengths from low-power to 2.2 kW.
“The products for our GaAs MMICs had largely been wide-band parts so DC to 20, DC to 40, and DC to 67 and so they weren’t band-optimized. There was very little band selectivity, so we gave up performance in any given band,” said Mike Ziehl, senior manager of product marketing at Microchip.
“Strategically, the idea is to start going back and overlaying high performance parts by band and especially in these types of frequencies, at 30 GHz or even higher, there are definite advantages in the amount of power and the efficiency and even the size,” he added.
Microchip’s previous portfolio was largely targeting instrumentation and wideband aerospace.
The move to GaN, instead of GaAs, provides the option of higher frequencies and higher power as well as band-specific higher performance, said Ziehl. “It really is a way to augment the portfolio.”
With the GaN MMICs, it gives Microchip the targeted band-specific parts, including an S-band part, a series of X-band parts, and Ka- and Ku-band parts, along with wideband GaN MMICs, he added.
(Source: Microchip Technology)
All of Microchip’s GaN RF power products are fabricated using GaN-on-silicon carbide technology for a combination of high-power density and yield, as well as high-voltage operation and longevity of more than 1 million hours at a 255°C junction temperature.
Delivering high power-added efficiency (PAE) and high linearity, the new MMICs and discrete transistors target 5G, electronic warfare, satellite communications, commercial and defense radar systems, and test equipment. They include GaN MMICs covering 2 to 18 GHz, 12 to 20 GHz, and 12 to 20 GHz with 3-dB compression point (P3dB) RF output power up to 20 W, and efficiency up to 25%.
The new devices also include bare die and packaged GaN MMIC amplifiers for S- and X-band with up to 60% PAE, and discrete HEMT devices covering DC to 14 GHz with P3dB RF output power up to 100 W and maximum efficiency of 70%.
One of the standout parts is the S-band 70-W MMIC PA (ICP0349PP7) with high power-added efficiency (over 60% PAE), according to Ziehl, and it is one of the only parts available in a package. In this case, a 7 × 7-mm QFN. The device also is available in die form (ICP0349).
All other parts are only available in die form. However, Microchip is working on packaging as requested by a variety of customers, but they are not ready for announcement yet.
Microchip also released several new Ku and Ka band mmWave PA MMICs, including the ICP1543 and the ICP2840 (the previously announced GMICP2731-10), which are both available in production volume. The company also introduced the ICP2637, ICP1937, ICP1940, ICP1445, and ICP2837 devices, which are sampling now.
The ICP2840 was targeted at the Ka-band satellite communications, but it also covers the 28-GHz mmWave 5G band and customers are looking at it for that application as well as the satellite application, said Ziehl.
The ICP2840 delivers up to 10 W of saturated RF output power across the 3.5 GHz of bandwidth between 27.5 to 31 GHz, a PAE of 20%, 22 dB of small-signal gain, and 15 dB of return loss. The device is well matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration, said Microchip.
Ku and Ka band mmWave PA MMICs (Source: Microchip Technology)
(Source: Microchip Technology)
Microchip also introduced several new GaN high-power broadband MMIC amplifiers that cover the L-band to Ku band. These devices cover 1-8 GHz (ICP0444 25 W), 12-18 GHz (ICP1543 20 W), 6-18 GHz (ICP1240 10 W), and 2-18 GHz (ICP1137 5W). The ICP1543 is in production, the ICP1240 will be in production in Q4 2021, and the ICP0444 and ICP1137 are sampling.
GaN high-power broadband MMIC amplifiers (Source: Microchip Technology)
Microchip also offers several X-band GaN PA MMICs (7.9 to 11 GHz), offering a range of power levels, including 12, 20, 25, and 35 W, with high efficiency in 50-ohm matched MMICs. These devices – ICP1040 (12 W), ICP1043 (20 W), ICP1044 (25 W), and ICP1045 (35 W) – are sampling now.
X-band GaN PA MMICs (Source: Microchip Technology)
The company also released three GaN discrete HEMT transistors – the ICPB1005 ( 25 W), ICP1010 (50 W), and ICPB1020 ( 100 W), all released into production. “Our previous portfolio was much more avionics and L-band focused for GaN transistors, and this gives us intersection with C-band and X-band, so you can go all the way up to 100 W, and it broadens the applications with our GaN transistors,” said Ziehl.
One of the standout parts is the 25-W ICPB1005, according to Ziehl. “The PAE for a broadband part is pretty high, considering it is across a DC to 14-GHz band.” The PAE is 54% at 10 GHz.
In summary, the new power devices, which include the ICP0349 and ICP0349PP7, ICP1543, ICP2840, ICPB1005/1010/1020, are available in volume production. Evaluation boards are available. The ICP2637, ICP1937, ICP1940, ICP1445, and ICP2837 are sampling now.
For devices in production, Microchip can deliver low-rate initial production with parts in stock, but for volume orders, they are subject to lead times like a lot of semiconductor companies right now, said Ziehl.
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