Microchip Technology Inc. has introduced the 3.3-kV XIFM plug-and-play mSiC gate driver to help developers implement silicon-carbide (SiC) solutions as electrification drives the widespread adoption of SiC technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles. Targeting high-voltage SiC power modules, the new mSiC gate driver features patented Augmented Switching technology, which is designed to work out-of-the-box with preconfigured module settings to reduce design and evaluation time.
The plug-and-play solution simplifies a lot of the development for design, test and qualification of a gate driver circuit design, Microchip said. In addition, the IXFM digital gate driver is highly integrated. It features digital control, an integrated power supply and a fiber-optic interface that improves noise immunity. It also has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
“By having the gate drive circuitry preconfigured, this solution can reduce design cycle time by up to 50% compared to a traditional analog solution,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit, in a statement.
Other features include 10.2-kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions such as temperature and DC link monitoring, undervoltage lockout (UVLO), overvoltage lockout (OVLO), short-circuit/overcurrent protection (DESAT) and negative temperature coefficient (NTC). The gate driver complies with EN 50155, a key specification for railway applications.
The 3.3-kV XIFM plug-and-play mSiC gate driver is now available for purchase at Microchip’s website or through an authorized distributor. The XIFM mSiC gate driver will be showcased at APEC 2024, February 25-29.
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