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Micron low-power memory targets the metaverse

Micron’s low-power memory solutions deliver high speed and power efficiency for metaverse applications on the Snapdragon XR2 Gen 2 platform.

Micron Technology, Inc. has announced that its low-power double data rate 5X (LPDDR5X) DRAM and Universal Flash Storage (UFS) 3.1 embedded solutions are qualified on Qualcomm Technologies’ latest extended reality (XR) platform, the Snapdragon XR2 Gen 2 Platform. These low-power memory solutions offer high speed and low-power consumption in small form factors needed for mixed reality (MR) and virtual reality (VR) devices.

The new memory solutions enable concurrent processing across multiple applications and sensors, Micron said, integrating constantly changing presence, position and sensory perception in the metaverse for realistic and immersive experiences.

The LPDDR5X DRAM can achieve speeds of up to 8.533 Gbits/s and is backwards compatible for LPDDR5 speeds of 6.4 Gbits/s. The UFS 3.1 client storage is the first UFS powered by Micron’s 176-layer NAND with high storage densities in a tiny footprint for space-constrained devices.

Developed in collaboration with Meta, the Snapdragon XR2 Gen 2 processor was commercially debuted on Meta Quest 3. Built for next-level MR and VR experiences, the Snapdragon XR2 Gen 2 Platform is a single-chip architecture that enables thinner headsets that do not require an external battery.

The platform includes an upgraded ISP and full color, ultra-fast 12-ms video see-through latency for smooth transitions between the real and the virtual world. Other features include Qualcomm’s Adreno GPU with 2.5× higher GPU performance, support for up to 3k × 3k displays, 8× more performant AI, support for 10 concurrent cameras and dedicated XR acceleration blocks.

Qualcomm's Snapdragon XR2 Gen 2 Platform.

Snapdragon XR2 Gen 2 Platform (Source: Qualcomm Technologies)

The Micron LPDDR5X is touted as the company’s most advanced low-power memory, delivering higher power efficiency thanks to its 1-alpha process node technology and JEDEC power advancements, which includes a speed extension, signal integrity improvements via TX/RX equalization, and reliability improvements due to the new adaptive refresh management features.

The LPDDR5X provides 24% increased power efficiency compared to previous generations, making it well suited for untethered MR and VR headsets, extending battery life between charges. “At peak data rates of 8.533 Gbits/s, Micron’s LPDDR5X enables metaverse applications with a 33% increase in data access speeds, resulting in fast response times,” Micron said.

The 128-gigabyte UFS 3.1 and 8-gigabyte LPDDR5X devices qualified for the Snapdragon platform are available now.

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