Module combines gate drive with SiC MOSFETs

By Warren Miller, contributing writer

Apex Microtechnology, a provider of high-power analog components, recently announced the launch of the SA110, a high-current, high-voltage half H-bridge that the company claims is the first module to combine a gate drive with silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) into a single module. Applications include DC/AC inverters and brushless DC motor drives in industrial, avionics, and military environments.

The hybrid switching device operates off of supply voltages of up to 400 V and at switching frequencies of between 250 kHz (typical) to 400 kHz (maximum) and provides 28 A of continuous output current. The SA110 also provides digital gate driver control and is packaged as a compact 12-pin power SIP unit, allowing for a very small design footprint.

While implementing SiC-based technology in hybrid switching amplifiers can lead to cost increases, Apex believes that improved performance will offset the cost increase. Reducing switching and conduction losses and a low temperature dependency of RDS(on) over a wide operating temperature range are some of the benefits of SiC MOSFETS. A reduction in power loss compared to standard silicon- and IGBT-based devices is also a plus, and the SA110’s integrated gate drive results in improved switching behavior compared to competitive devices.

The SA110 is sampling now for qualified applications. Volume production is scheduled for late Q1 2019.