The EPC2106 is an enhancement-mode monolithic GaN transistor half bridge that integrates two eGaN power FETs into a single device, which eliminates the interconnect inductances and the interstitial space needed on the PCB. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.
The half-bridge component has a voltage rating of 100 V with a typical RDS(on) of 55 mΩ, output capacitance <600 pF, zero reverse recovery (QRR ), and a maximum pulsed drain current of 18 A. It enables high efficiency and significantly reduces distortion in Class-D systems. The device is available in an extremely small 1.35 x 1.35-mm chip-scale package for improved switching speed and thermal performance for increased power density. To demonstrate, the EPC9106 Class-D audio amplifier reference design uses high frequency switching gallium nitride power transistors in the power stage providing precise high-power reproduction of the Class-D audio signal. Listen to a demonstration of a GaN-based Class-D audio system at http://youtu.be/AokgH9AO9eA?t=22m3s
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