Mornsun QA01C Power module for SiC MOSFET Devices

SiC MOSFET features high pressure resistant, low power consumption, high speed switching, which greatly enhance the power conversion efficiency of high-voltage inverter. 

Mornsun QA01C module offers ultra-high isolation voltage of 3500VAC and ultra-low isolation capacitance of 3.5pF, effectively avoiding the control side from being interfered by the buses dV/dt. They feature an unsymmetric driving voltage of +20/-4VDC designed for SiC device, reducing the switching loss. The high capacitive load ensures the instant high power driving and high frequency operation. The operating temperature of -40℃ ~ +105℃ meets most of the environmental requirements.