MOSFET arrays offer innovative control for EH applications

The ALD210800A / ALD210800 precision n-channel MOSFET array features zero-threshold voltage and establishes industry benchmarks for forward transconductance and output conductance, allows each MOSFET to be characterized with different input and output requirements, and reduces the footprint by up to 50%. The matched pair array gives circuit designers the flexibility to develop next-generation energy harvesting systems and low-power mobile devices that were never before possible. Designers can build circuits with multiple cascading stages and build a nanopower input amplifier stage operating at a new industry low of
 
The matched pair MOSFETs feature a zero gate threshold voltage VGS(th) set precisely at +0.00 V ±0.01 V, and VOS to 2 mV and 10-mV max. The precision parameters of the device enable