The STx6N62K3 power MOSFET uses the company’s new SuperMESH3 technology to improve from earlier designs the switching performance and efficiency in the PFC and half-bridge sections for lighting ballast and switching power supply designs.
The 620-V device has an RDS(on) of 1.28 Ω in a DPAK package. The technology also reduces reverse-recovery time, gate charge, and intrinsic capacitance. The technology combines strip topology with a vertical structure. (From $0.62 ea/1,000 — available now.)
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