MOSFET improves efficiency, figure of merit

The FDP083N15A_F102, FDB082N15A, and FDP036N10A n-channel PowerTrench MOSFETs provide 66% improved figure of merit, QG x RDS(on) , from previous solutions. The devices are members of a MOSFET family of 100- and 150-V devices and include industrial-type packages, including the TO-220, D2PAK, TO247, I2PAK, TO220 Full Pack, and D2PAK-7L.

The MOSFETs target high efficiency ac/dc converters. They are optimized power switches that combine a small gate charge (QG), reverse recovery charge (QRR ), and a soft reverse-recovery body diode. They provide a high efficiency solution for applications including synchronous rectification, micro-solar inverters and off line UPS systems, and PDU/BFU in telecom power distribution. (Ea/1,000: FDP083N15A_F102, $3.43; FDB082N15A, $3.45; FDP036N10A, $3.50 available now.)

By Paul O’Shea

Fairchild Semiconductor , South Portland , ME
Sales 207-775-8100
www.fairchildsemi.com