MOSFET in PowerDI8080-5 package targets EV applications

Diodes Inc. has introduced the PowerDI8080-5, a high-current, thermally-efficient power package for electric vehicle (EV) applications. The first product to be released in the new package is the DMTH4M70SPGWQ, a 40-V automotive-compliant MOSFET that features a low on-resistance to minimize power losses.

The device offers a typical R_DS(ON) of 0.54 mΩ at a gate drive of 10 V, while the gate charge is 117 nC. This performance targets designers of automotive high-power BLDC motor drives, DC/DC converters, and charging systems to help them maximize system efficiency while keeping power dissipation to a minimum, said the company.

The PowerDI8080-5 package has a printed-circuit-board footprint of 64 mm², which is 40% less than the TO263 (D2PAK) package format. The off-board profile measures 1.7 mm, which is 63% lower than the TO263.

Copper clip bonding is used between the die and the terminals, delivering a low junction-to-case thermal resistance of 0.36°C/W. This enables the new package to handle currents up to 460 A and deliver a power density that is eight times greater than a TO263 package, reported the company. The operating temperature range is 55°C to 175°C.

The DMTH4M70SPGWQ with gull wings is AEC-Q101 qualified and supports the Production Part Approval Process (PPAP). It is RoHS compliant as well as halogen and antimony free. The MOSFET is priced at $4.99 in quantities of 2,000.