SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing greater efficiency, reducing heat dissipation and allowing the use of smaller heatsinks.
The MOSFET modules, tested to above 1400 V, are designed for high-frequency and high-power environments for demanding applications that require bidirectional power flow or a broad range of control. Applications include solar inverters, drives and chargers for electric vehicles, DC/DC converters and power supplies.
(Source: SemiQ)
The QSiC 1200-V SiC MOSFET modules help reduce heat loss, improve thermal stability and enhance reliability, SemiQ said. They are made from high-performance ceramics and are backed by over 54 million hours of HTRB/H3TRB testing.
In full-bridge configurations, they can withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift over the entire temperature range. When used in solar inverter applications, the modules reach as high as 98% efficiency in more compact designs.
The 1200-V MOSFETs also improve efficiency and reliability in DC/DC converters, while minimizing power dissipation, the company said.
SemiQ conducts gate burn-in testing at the wafer level, which helps mitigate extrinsic failure rates. A variety of additional stress tests, such as gate stress, HTRB drain stress and H3TRB, are used to meet existing automotive and industrial grade quality standards. The devices also offer extended short-circuit ratings.
The 1200-V MOSFET modules in full-bridge packages are currently available with 20 mΩ, 40 mΩ 80 mΩ ratings. Datasheets are available for the new parts: GCMX020A120B2H1P, GCMX040A120B2H1P, GCMX080A120B2H1P, GCMX020A120B3H1P and GCMX040A120B3H1P. SemiQ will debut the QSiC product family in SOT-227, half-bridge and full-bridge packages at APEC 2024, booth #2245.
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