Offered in both n- and p-channel polarities, the S-MOS Series of MOSFETs includes 17 six-pin devices designed for 0.5- to 2.5-A load switching and dc/dc converters operating at 0.5 to 1 MHz, and 20 three-pin devices for 0.5- to 4.0-A applications. Provided in 2.8- and 1.6-mm2 packages, the 6-pin SSM6K and SSM6J families have on-resistance values from 30 to 400 mW and come in a 1.6 x 1.6 x 0.55-mm package and the 3-pin SSM3K and SSM3J devices have an RDS(on) from 100 to 400 mW in a 2.8 x 2.9 x 0.7-mm package.
The 6-pin n-channel devices have a drain source voltage of 20 or 30 V and a driving voltage of 1.8, 2.5, or 4 V, and the p-channel have –12-, –20-, or –30-V drain source voltage with a driving voltage of 1.5, 1.8, 2.5, or 4 V. The 6-pin n-channel devices have a drain source voltage of 20, 30, or 60 V with a driving voltage of 1.8, 2.5, or 4 V, and the p-channel devices have –12-, –20-, or –30-V drain source voltage with a driving voltage of 1.8, 2.5, or 4 V. (From $0.05 ea/small qty—available now.)
Toshiba America Electronic Components , Irvine , CA
Information 949-623-2900
Advertisement
