MOSFETs deliver low on-resistance

Nexperia continues the expansion of its NextPower 80-V and 100-V MOSFET portfolio with the launch of several new LFPAK devices in 5 × 6 mm and 8 × 8 mm footprints. These new NextPower 80-V/100-V MOSFETs are optimized for low R_DS(on) and low Q_rr, to deliver high efficiency and low spiking in a variety of communication and industrial applications. These include servers, power supplies, fast chargers and USB-PD as well as a range of telecommunications, motor control and other industrial equipment.

(Source: Nexperia)

These new MOSFETs offer a range of 80-V and 100-V devices, with R_DS(on) from 1.8 mΩ to 15 mΩ. The on-resistance (R_DSon) has been reduced by up to 31% compared to currently available devices.

“Many MOSFET manufacturers focus on achieving high efficiency through low Q_G(tot) and low Q_GD,  when benchmarking the switching performance of their devices against alternative offerings,” Nexperia said. “However, through extensive research, Nexperia has identified Q_rr as being even just as important due to its impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching.”

As a result, Nexperia has significantly reduced the spiking level produced by the NextPower 80-V/100-V MOSFETs, lowering the amount of EMI they produce. “This brings significant benefits for end users by reducing the probability of a costly late-stage redesign to include additional external components if their application fails electromagnetic compatibility (EMC) testing,” the company said.

Later this year, Nexperia plans to introduce an additional LFPAK88 MOSFET offering R_DS(on) down to 1.2 mΩ @ 80 V and the “power-dense” CCPAK1212. Interactive datasheets are available to support design-in and qualification of these devices.