MOSFETs improve RDS(on) by 50%

The IRFP4004PBF trench HEXFET power MOSFET features low RDS(on) in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power dc motors, dc/ac inverters and power tools. The MOSFETs offer a 50% improvement RDS(on) over competing devices, has lower conduction losses, and eliminates the need for large packages.

The family of n–channel MOSFETs provide a voltage range from 40 to 200 V. The devices are qualified for industrial-grade temperatures and moisture sensitivity level 1. ($2.08 ea/10,000 — available now.)

International Rectifier , El Segundo , CA
Graham Robertson 310-726-8512

http://www.irf.com