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MOSFETs improve switcher performance

The MOS 8 MOSFET and FREDFET devices offer an RDS(on) as low as 0.075 W with improved oscillation immunity, lower peak slew rates, reduced EMI and high dv/dt ruggedness capability, with a FREDFET body diode recovery speed of less than 250 ns. Designed for high-power switchmode applications including PFC, server and telecom power systems, solar inverters, arc welding, plasma cutting, and battery chargers, the devices come in versions with current and voltage ratings of 19 to 75 A and 500 to 1200 V, respectively.

MOSFETs improve switcher performance

The devices have a lowered thermal resistance and higher current ratings for each die size and package type compared to earlier devices. All MOS 8 devices are 100% tested for avalanche energy capability and are offered only in RoHS-compliant packages. (From $7.34 ea/1,000—available now.)

Microsemi , Irvine , CA
Support 800-713-4113
http://www.microsemi.com

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