MOSFETs offer 0.19-Ω on-resistance

Three high-voltage MOSFETs; the AP11S60-HF-3, AP14S50-HF-3 and AP20S60-HF-3 offer improved on-resistance and gate charge from previous models. The MOSFETs feature RDS(on) as low as 0.19 Ω (AP20S60-HF-3), a gate-source voltage of ±20 V, and a continuous drain current of 20 A at 25°C.

The three MOSFETs are designed as main switching devices for 90 to 265-Vac input converter designs. Devices are available in the TO-220CFM-isolated through-hole packaging with a blocking voltage of 600 V to withstand voltage surges and a thermal resistance of 3°C/W between the junction and case. They have an operating temperature range from -55° to 150°C.