Nexperia has expanded its MOSFET family with the release of new devices in DSN1006 and DNS1010 packages for space-constrained applications. These include the PMCB60XN and PMCB60XNE 30-V N-channel small-signal trench MOSFETs in the ultra-compact wafer-level DSN1006 package, and the PMCA14UN, a 12-V, N-channel trench MOSFET in a DSN1010 package.
(Source: Nexperia)
The new MOSFETs target miniaturized electronics like smartphones, smart watches, hearing aids, and earphones. With an RDS(on) up to 25% better than competing devices, the 30-V MOSFETs minimize energy losses, increase efficiency in load switching and battery management, and also reduce self-heating, which improves user comfort in wearable devices, said Nexperia.
The PMCB60XN and PMCB60XNE devices provide an RDS(on) of 50 mΩ and 55 mΩ respectively, at VGS = 4.5 V. “This gives them the lowest on-resistance per die area among similar 30-V MOSFETs in the market,” said Nexperia.
Both MOSFETs are rated for drain current up to 4 A. The PMCB60XNE also offers built-in ESD protection rated to 2 kV (human body model – HBM) in the 1 × 0.6 × 0.2-mm DSN1006 package.
The PMCA14UN 12-V, N-channel trench MOSFET offers a max RDS(on) of 16 mΩ at VGS = 4.5 V. It is said to deliver market-leading efficiency in the 0.96 × 0.96 × 0.24-mm (SOT8007) outline package.
The 30-V PMCB60XN and PMCB60XNE as well as the 12-V PMCA14UN devices are in production.
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