Based on the UMOS VI-H sixth-generation trench process, the TPCA8028-H and TPC8035-H MOSFETs are suited for use in high-efficiency dc/dc converter applications in notebook PCs and other electronic applications. The new MOSFETs feature aluminum strap connections instead of wire-bond technology to reduce RDS(on) .
The TPCA8028-H is well suited for use as a low-side MOSFET in dc/dc converter applications, and features drain-source voltage (VDSS ) of 30 V max, drain current of 50 A max, RDS(on) of 2.0 mΩ typ, and low-profile SOP advance packaging measuring 5 x 6 x 0.95 mm. The TPC8035-H, a similar device in SOP-8 packaging measuring 5 x 6 x 1.6 mm, features VDSS of 30 V max, ID of 18-A max., and RDS(on) of 2.3 mΩ typ. (TPCA8028-H: $0.65; TPC8035-H: $0.60 samples available now.)
Toshiba America Electronic Components , Irvine , CA
Sales 949-623-2900
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