MOSFETs use BGA package

Using proprietary metal interconnect structures integrated into a wafer-level BGA package, a family of singe and dual n-channel MOSFETs has an RDS(on) at 4.5 V from 1 to 34 mΩ and an FOM from 21 to 300.

The 3-mm3 devices have a junction-to-PCD thermal resistance of 2°C/W and occupy a footprint one-third the size of an SO8 package. (Contact company for pricing—available now.)

Great Wall Semiconductor , Tempe , AZ
Information 602-228-5870
http://www.greatwallsemi.com