MoSys Launches New Memory Macros Specifically Configured for Mobile Handset Displays

MoSys Launches New Memory Macros Specifically Configured for Mobile Handset Displays

MoSys, Inc. announced today the availability of an application-specific implementation of its industry-leading 1T-SRAM(R) memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display macros have been designed specifically for mobile handset displays. Initial customer adoption is already underway, marking MoSys' entry into a new high-volume consumer market.

New 1T-SRAM(R) Dual-Port Display Memory Macro with Foundry Support Opens Significant New Market for MoSys; Initial Adoption in Handset Displays Already Underway

Manufacturers of mobile handsets are under increasing pressure to incorporate larger buffer memory into the display to accommodate increases in display size and pixel densities. Such increases are driven by added functionality, like video playback, gaming, and high-resolution cameras on mobile phones. The MoSys 1T-SRAM Dual-Port Display macro is used as the display buffer memory mounted on the display (chip-on-glass) or on the connecting cable (chip-on-film or tape carrier package). By keeping the display buffer memory on the display itself, mobile vendors can reduce electromagnetic interference (EMI) challenges, while cutting overall display power consumption. In these configurations, the buffer memory must conform to unusual area and form factor requirements of the display, which is easily accomplished using the MoSys 1T-SRAM technology.