May 28, 2013 – Mouser Electronics , Inc. today announced it is stocking the industry's first SiC MOSFET and SiC Schottky diode combined in a single half-bridge package—the CAS100H12AM1 from Cree.
Cree CAS100H12AM1 1,200-V high-frequency silicon carbide half-bridge module is the first commercially available all silicon carbide (SiC) power module. It is also the first fully qualified module with both SiC MOSFETs and SiC Schottky diodes combined in a single half-bridge package. This new dual module features ultra-low loss and high ruggedness for high-frequency operation. The CAS100H12AM1 has demonstrated up to 100-kHz operation and provides 100-A current handling at 1,200-V blocking. Higher-frequency operation enables compact and lightweight systems and less-expensive inductors and capacitors in the system. The CAS100H12AM1 is ideal for industrial applications including high-power converters, motor drives, solar inverters, UPS and SMPS, and induction heating. To learn more, visit http://www.mouser.com/new/cree/cree-MOSFETdiode/.
With its broad product line and unsurpassed customer service, Mouser caters to design engineers and buyers by delivering What’s Next in advanced technologies. Mouser offers customers 19 global support locations and stocks the world’s widest selection of the latest semiconductors and electronic components for the newest design projects. Mouser Electronics’ website is updated daily and searches more than 10 million products to locate over 3 million orderable part numbers available for easy online purchase. Mouser.com also houses an industry-first interactive catalog, data sheets, supplier-specific reference designs, application notes, technical design information, and engineering tools.
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