Navitas releases Gen-3 SiC MOSFETs

Navitas Semiconductor has released its Gen-3 ‘Fast’ (G3F) 650-V and 1,200-V silicon-carbide (SiC) MOSFETs, ahead of PCIM Europe 2024. These devices are optimized for fast switching, high efficiency and increased power density for applications such as AI data-center power supplies, on-board chargers (OBCs), fast electric vehicle (EV) roadside super-chargers and solar/energy-storage systems (ESS).

(Source: Navitas Semiconductor)

Optimized for high-speed switching, the G3F family offers a 40% improvement to hard-switching figures-of-merits (FOMs) compared to the competition in CCM TPPFC systems, according to Navitas. This will enable an increase in the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack from 30 kW to 100-120 kW.

Based on a proprietary “trench-assisted planar” technology, the G3F GeneSiC MOSFETs are reported to offer better-than-trench MOSFET performance, while also providing higher robustness, manufacturability and cost than the competition. “The trench-assisted planar technology enables an extremely low R_DS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower R_DS(ON) under real-life operation at high temperatures compared to competition,” Navitas said.

In addition, the high speed performance with high efficiency enables up to 25°C lower case temperature, and up to 3× longer life than SiC products, the company said.

Navitas also noted that the GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time and tight threshold voltage distributions for easy paralleling.

One product example cited is the 1,200-V/34-mOhm (G3F34MT12K) G3F FETs for the EV market. These devices enable Navitas’ new 22-kW, 800-V bi-directional OBC and 3-KW DC/DC converter to achieve a power density of 3.5 kW/L and a peak efficiency of 95.5%.

Navitas’ recent 4.5-kW high-power density AI server PSU reference design in the CRPS185 form-factor features the 650 V-rated, 40-mOhms G3F FETs for an Interleaved CCM TP PFC topology and GaNSafe power ICs in the LLC stage. The design delivers a power density of 138 W/inch³ and peak efficiency above 97%, which meets the Titanium Plus efficiency standards, now mandatory in Europe.

The G3F devices are available in industry-standard packages from D2PAK-7 to TO-247-4, designed for high-power and high-reliability applications. Parts are available now to qualified customers.

Navitas is exhibiting at PCIM Europe 2024, June 11-13, Nuremburg, Germany, in hall 9, booth #544.