Navitas Semiconductor has entered into higher power markets with the introduction of silicon carbide (SiC) power products in SiCPAK SiC modules and bare die. Target applications include solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC/DC converters and solid-state circuit breakers.
The company’s SiC portfolio ranges from 650-V to 6,500-V devices, with an original introduction of discrete packages, including 8 × 8-mm surface-mount QFNs and through-hole TO-247s. The new GeneSiC SiCPAK product portfolio is the company’s entry point into high-power applications with a full power-module roadmap under development.
(Source: Navitas Semiconductor)
Incorporating GeneSiC die with high performance, reliability and ruggedness, the SiCPAK modules use a press-fit technology to offer compact form factors. An example includes a SiCPAK half-bridge module, rated at 6 mOhm, 1,200 V with trench-assisted planar-gate SiC MOSFET technology.
Navitas said multiple configurations of SiC MOSFETs and MPS diodes will be available to create application-specific modules. The initial release will include 1,200 V-rated half-bridge modules in 6, 12, 20, and 30-mOhm ratings.
In the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for improved cooling and reliability, while the substrate is ‘direct-bonded copper’ (DBC) and manufactured using an active-metal brazing (AMB) technique on silicon-nitride (Si3N4) ceramics, which is suited for power-cycling applications, said the company.
All GeneSiC MOSFET and MPS diodes are available in bare die format, with gold (Au) and aluminum (Al) top-side metallization, for customers who want to build their own high-power modules, said Navitas.
Navitas is exhibiting at the PCIM 2023 conference, May 9-11, in Hall 9, booth #525. The company also will participate in several technical sessions.
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